Formation of pure anatase TiO ₂ using the reactive pulsed dc magnetron sputtering method for controlling the target poisoning state

The use of pulsed dc-sputtering sources for reactive magnetron sputtering with oxygen offers a possibility to suppress the negative effects target poisoning (such as arcing). This results in wide process range selection desired operating point. control plays major role maintaining constant coating properties and affects stoichiometry coating, well rate economic impact process. In hysteresis, during titanium under addition proceeds nonlinearly. Without suitable technique, can abruptly change an unstable state. As result, variations occur deposition A proven method stable is flow input variable voltage. By determining typical hysteresis at power argon flow, point loop derived. voltage then serves poisoning. controlling technique basic requirement production photolytic active anatase phase dioxide (TiO2) using sputtering. photocatalytic equipment surfaces be realized dc sputter ion plating (DC-MSIP). DC-MSIP facilitates variety temperatures below 200°C environmentally friendly manner.